Silicon Carbide Electronics
- Reference number
- A3 96:31
- Start and end dates
- 960101-021231
- Amount granted
- 91 000 000 SEK
- Administrative organization
- KTH - Royal Institute of Technology
- Research area
- Information, Communication and Systems Technology
Summary
Silicon carbide has certain material properties that make it very attractive as a component for high-power, high-frequency and high-temperature applications because of its wide band gap. As a result of previous government and industrial research efforts in the early 1990s, Sweden holds a leading position in SiC research. The goal of the programme is to carry out research in basic questions of significance for industrial applications in the areas of materials, components and systems, and to continue as one of the leading research groups in SiC in certain research areas.