Developing 3D architectures based on semiconductor nanowires
- Reference number
- IB13-0044
- Start and end dates
- 140901-190831
- Amount granted
- 5 820 000 SEK
- Administrative organization
- Lund University
- Research area
- Materials Science and Technology
Summary
Semiconductor nanowires represent an important technology for next-generation electronic and optoelectronic devices. Fabrication of these materials has reached a sufficiently advanced level that the next step is to integrate them into more complex architectures. In this project, techniques will be developed to fabricate complex three-dimensional structures based on the nanowire concept. The project will broadly follow two development paths: selective growth of heterostructure materials in the lateral dimension, and fabrication of 3D branched structures. The materials chosen as development platforms are directly important for specific applications in electronics and physics. For selective radial growth, heterostructures will be developed in the InAs-AlSb-GaSb material system, which is highly important for tunneling device applications. This technique will utilize the well-developed capability to tune crystal structure in III-V nanowires, to selectively enhance and suppress heterostructure formation along the nanowire. Materials developed will be directly available to industrial collaborators. Branched structures will initially be developed for InSb, which are highly desirable for investigations of Majorana fermions and their potential in quantum computing. Further investigations will focus on InAs with aim towards electronic applications.
Popular science description
To continue the development of new and enhanced components that have the potential to enable future needs for advanced electronics, there is a great interest in exploring new, more advanced materials, and in combining different materials to achieve advantageous features and functions. Today, electronic components are usually composed of silicon. However, new and interesting properties are available in the related semiconductors known as V-III materials. There is much to be gained by combining silicon with III-Vs to take advantage of properties of different materials. However, it is challenging to combine these materials due to their different crystal structures (periodic arrangement of atoms). One solution to this challenge is to combine materials in structures known as nanowires. Nanowires are one-dimensional objects having a typical diameter of 1-100 nm and a length of typically 2 microns. The small diameter minimizes the effects of combining different crystal structures, which dramatically increases the number of combinations that can be used when designing components. This application is about developing new ways to combine semiconductor materials based around the nanowire concept. The aim will be to deposit additional materials and structures onto the nanowire surfaces, and use the nanowire material and structure to control this process. The structures that result will then be much more complex and be useful for a wider variety of applications. The materials that will be developed here are intended for use in future electronics, as well as in the development of entirely new methods of computing, for much faster computers farther in the future.