High-voltage valves with matrix-connected SiC devices
- Reference number
- SM15-0046
- Start and end dates
- 160101-181231
- Amount granted
- 800 000 SEK
- Administrative organization
- ABB Power Grids Research
- Research area
- Information, Communication and Systems Technology
Summary
The project will focus on matrix, i.e. series and parallel, connection of silicon carbide (SiC) devices in high-voltage valves. Such devices hold great promise for future generations of high-voltage converters, for e.g. high-voltage direct-current (HVDC) transmission. The technology facilitates even lower losses than today's silicon-device-based converters, and also higher transient currents. This is important in order for ABB to stay competitive in the future, with an increasing number of HVDC manufacturers entering the market. In order to construct semiconductor valves for high enough voltage and current, the SiC devices must be both series and parallel connected, i.e. in a matrix. Initial studies of this has been conducted, both at KTH (parallel connection) and at ETH in Zürich (series connection). Yet, many challenges remain. Devices suitable for matrix connection must be found and their properties be modeled. In particular, the dynamics of the relatively complex matrix of SiC devices must be studied. Thereafter, a control system for the matrix-connected valve is to be designed and evaluated by simulation and experiment.
Popular science description
Ansökan avser en adjungerad professur i effektelektronik på KTH, omfattande 30% under två år. Avsikten med professuren är att studera matriskoppling av kiselkarbidkomponenter, vilket är nödvändigt för att kunna bygga ventiler för högspänningsomvandlare. Sådana komponenter möjliggör ytterligare minskning av förlusterna, vilket stärker konkurrenskraften hos svensk industri i området.